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Research descriptionSub-theme II
Research description
Sub-theme II. Envelope functions in semiconductor suprelattices
Control of the wavefunctions in semiconductor superlattices by external electric fields
1 : Summary of outline, objectives and outcomes
Viewgraphs (in English) ... under construction
"Control of the Wavefunctions in Semiconductor Superlattices by Electric Fields" is related to not only interband transitions but also intersubband transitions in SLs and QWs. "Interband transition" means the transitions between the conduction (electron) and valence (hole) bands. In contrast, "Intersubband transition" is the transition between the quantized levels within the conduction or valence band. Quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which are key devices for mid-infrared (4 mm to sub-mm) spectroscopy, utilizes this intersubband transition phenomena.
2 : List of outcomes
＿Publications
1 "Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAlAs superlattice".
K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.
Physica B: Physics of Condensed Matter vol.272, pp.198-201 (1999).
-Proceedings of the 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan, (1999).
# Link to the online-journal site
2 "Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice".
K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.
Institute of Physics Conference Series No.166, pp.139-142 (2000).
-Proceedings of the 26th Int. Symp. on Compound Semiconductors, Berlin, Germany, (1999).
3 "Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field".
M. Ando, M. Nakayama, H. Takeuchi, H. Nishimura, N. Ohtani, N. Egami, M. Hosoda, and H. Mimura.
Journal of Luminescence vol.87-89, pp.411-414 (2000).
-Proceedings of the 1999 Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter, Osaka, Japan, (1999).
# Link to the online-journal site
4 "Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs superlattice".
C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, H. Takeuchi, M. Nakayama, and T. Nishimura.
Applied Physics Letters vol.77, pp.848-850 (2000).
# Link to the online-journal site
5 "Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs double-quantum-well superlattice".
C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, T. Nishimura, H. Takeuchi, and M. Nakayama.
Springer Proceedings in Physics vol.87, pp.729-730 (2001).
-Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka, Japan, (2000).
# Link to the publisher's site
6 "Mid-infrared electroluminescence from the G2-G1 intersubband transition using G-X electron injection in a GaAs/AlAs double-quantum-well superlattice".
C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama.
IPAP Conference Series 2 (CS2), pp.134-136 (2001).
-Proceedings of the 10th International. Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Ishikawa, Japan, (2001).
# Link to the online-journal site
7 "Photoluminescence from high G-electron subbands and intersubband electroluminescence using X-G carrier injection in a simple GaAs/AlAs superlattice".
C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, T. Aida, H. Takeuchi, and M. Nakayama.
Japanese Journal of Applied Physics vol. 41, pp.5073-5077 (2002).
# Link to the online-journal site
3 : Posters and viewgraphs
Currently, not uploaded.
