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Home List of outcomesInternational Academic Conference Presentations

List of outcomes

International Academic Conference Presentations

First-authored papers (red number) / Co-authored papers (black number) = 30/16 ..... Total 46

- The items with a pound (number) sign, # , provide the posters and viewgraphs presented at the conferences.
- red : First Authored / gray : Co－Authored

in 2022

"Can longitudinal optical phonons obtain longer decay time by introducing defects with the use of surface treatments? A terahertz time-domain spectroscopic study on GaAs epilayers".
Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama
The 35th International Conference on the Physics of Semiconductors (ICPS2022), International Convention Centre Sydney, Sydney, Australia (July 27 - 30, 2022)

in 2021

"Terahertz time-domain spectroscopy of GaAs epitaxial layers treated with the use of fast atom bombardment".
Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama
The 31st International Conference on Defects in Semiconductors (ICDS31), The University of Oslo, Oslo, Norway (July 26 - 30, 2021)

in 2019

"Terahertz emission from coherent longitudinal optical (LO) phonons and LO-phonon-plasmon coupled modes in a low-temperature-grown GaAs epitaxial layer".
Hideo Takeuchi, Takuya Nishimura, Masaaki Nakayama, Andra Chen, Richard L. Field, III, and Rachel S. Goldman
The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21), Nara Kasugano International Forum IRAKA, Nara, Japan (July 14 – 19, 2019)

in 2017

"Reliability Evaluation of a Passivation Thin Film Deposited on a GaAs Epilayer with Use of Photoreflectance Spectroscopy".
Hideo Takeuchi.
29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue-Kunibiki messe, Matsue, Japan (July 31 – Aug.4, 2017)

"Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells".
Hideo Takeuchi, Souta Asai, and Masaaki Nakayama.
The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON20), Hyatt Regency Hotel, Buffalo, New York, USA (July 17-21, 2017).

in 2016

"Effects of photogenerated carrier scattering on the decay process of coherent longitudinal optical phonons in an undoped GaAs/n-type GaAs epitaxial structure investigated by terahertz time-domain spectroscopy".
Hideo Takeuchi, Takahiro Sumioka, and Masaaki Nakayama.
The Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016), December 11-15, 2016, The Big Island of Hawaii, USA.

"Appearance of coherent LO phonons during the decay of LO-phonon‒plasmon coupled mode in an undoped GaAs/n-type GaAs epitaxial structure".
Takahiro Sumioka, Hideo Takeuchi, and Masaaki Nakayama.
The 19th International Conference on Dynamical Processes in Excited States of Solids (DPC' 16), July 17-22, 2016, Chimie ParisTech, Paris, France.

in 2015

"Intermediate range order in Ge-(Sb)-Te amorphous films prepared by vacuum thermal evaporation and electrochemical metallization memory prepared by RF magnetron sputtering".
Toshihiro Nakaoka, Hiroki Satoh, Yukiomi Nishiyama, Shimon Kida, and Yusuke Imanishi, Saori Honjo, and Hideo Takeuchi.
The 27th Symposium on Phase Change Oriented Science (PCOS 2015), November 26-27, Atami New Fujiya Hotel, Atami, Japan.

"Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures".
Hideo Takeuchi, Souta Asai, Shuichi Tsuruta, Takahiro Sumioka, and Masaaki Nakayama.
The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.
37

"Dynamical properties of terahertz radiation from coherent longitudinal optical phonon-plasmon coupled modes in an undoped GaAs/n-type GaAs epitaxial structure".
Takahiro Sumioka, Hideo Takeuchi, and Masaaki Nakayama.
The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.

in 2014

"Comparison of Detection Ability for Residual Strains in a (110)-oriented ZeTe Single Crystal between Photoluminescence Spectroscopy and Polariscopic Analysis: Explore of Strain-Sensitive Optical Characterizations".
H. Takeuchi
The International Conference on Luminescence and Optical Spectroscopy of Condensed Matter 2014, July 13-18, 2014, University of Wrocław, Wrocław, Poland.

in 2013

"Comparison in Internal Strain Sensitivity between Polariscopy and Raman Scattering Spectroscopy in a ZnTe Single Crystal;".
H. Takeuchi
The International Conference on II-VI Compounds and Related Materials, September 9-13, 2013, Nagahama Royal Hotel, Nagahama, Japan.

"Photgenerated carrier effects on terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n) oriented GaAs/In0.1Al0.9As strained multiple quantum wells;".
H. Takeuchi, Souta Asai, and Masaaki Nakayama.
The International Workshop on Advanced Spectroscopy and Optical Materials, July 14-19, 2013, Gdansk, Poland.

in 2012

"SiC surface damage originating from synergy effect of Ar plasma ion and plasma-induced ultraviolet light irradiations".
R. Kawakami , M. Niibe, H. Takeuchi, M. Konishi, Y. Mori, T. Shirahama, T. Yamada, and K. Tominaga.
25th International Conference on Atomic Collisions in Solids, October 21-25, 2012, Kyoto, Japan.

"Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas".
Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Masashi Konishi, Yuta Mori, Hideo Takeuchi, Tatsuo Shirahama, Tetsuya Yamada, and Kikuo Tominaga.
11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM (Symposium on Plasma Science for Materials), October 2-5 Kyoto University ROHM Plaza, Kyoto Japan.

"Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy".
Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.
The 14th International Conference on Phonon Scattering in Condensed Matter (PHONONS2012), July 8-12, 2012, University of Michigan, Ann Arbor, Michigan, USA.

"Effects of crystal-plane distortion on enhancement of excitonic photoluminescence intensity in a ZnO wafer".
Hideo Takeuchi.
The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials, July 1-6 2012, De Oosterpoort, Groningen, The Netherlands.

"Good stoichiometry achieved by simple vacuum-thermal deposition of GeTe and Ge2Sb2Te5 thin films".
Hiroki Satoh1 Toshihiro Nakaoka, and Hideo Takeuchi.
The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.

"Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer".
Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.
The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.　

in 2011

"Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure". Shuichi Tsuruta, Hideo Takeuchi, and Masaaki Nakayama.
15th International Conference on Thin Films (ICTF-15), November 8-11, 2011.
Kyoto Terrsa, Kyoto, Japan.

"Circular polariscopic analysis of a ZnO wafer for highly sensitive and speedy evaluation of residual strains: Its relation with x-ray diffraction pattern and topography"
Hideo Takeuchi.
15th International Conference on II-VI Compounds (II-VI 2011), August 21-26 2011.
Ocean Coral & Turquesa, Riviera Maya, Mexico.
*** Poster Presentation Thu-31***
The abstract is here. / The viewgraph is here.

"Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy".
Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.
15th International Conference on Narrow Gap Systems (NGS15) August 1-5, 2011.
Virginia Polytechnic Institute & State Universiherety, Virginia, USA.
*** Oral Presentation, August 4, Thursday***
The abstract is here.

"Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method".
H. Takeuchi, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.
The International Conference on Luminescence & Optical Spectroscopy of Condensed Matter 2011, June 26-July 1 2011, Central Campus of the University of Michigan, Ann Arbor, Michigan, USA.
*** Poster Presentation WP135 (June 29,Wednsday)***
The abstract is here. / The viewgraph is here.

"Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to x-ray topography".
Hideo Takeuchi.
The 38th International Symposium on Compound Semiconductors, May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany
*** Poster Presentation P4.80 (May 24,Tuesday)***
The abstract is here. / The viewgraph is here.

"Intense emission of terahertz electromagnetic wave originating from a surface surge current in an undoped GaAs/n-type GaAs epitaxial layer structure"
Takayuki Hasegawa, Hideo Takeuchi, and Masaaki Nakayama.
20th Anniversary Joint-Symposium of School of Science, University of Hyogo, International Symposium on Bioimaging and Surface Science, February 26-27, 2011, University of Hyogo, Hyogo, Japan

in 2010

# 21

"Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes".
Hideo Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.
The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10), June 20-25, 2010, APS Conference Center, Argonne National Laboratory, Argonne, Illinois, USA.
*** Poster Presentation Session P52 (June 22, Tuesday) ***
The abstract is here. / The viewgraph is here.

# 20

"Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures".
Hideo Takeuchi , J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.
The 37th International Symposium on Compound Semiconductors (ICSC2010) May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan.
*** Poster Presentation Session # FrP30 (June 4, Fryday) ***
The abstract is here. / The viewgraph is here.

in 2009

# 19

"Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements".
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama.
The 8th International Conference on Nitride Semiconductors (ICNS-8) Oct. 18-23, 2009, Jeju-island, Korea.
*** Poster Presentation ThP12 (October 22, Thursday) ***
The abstract is here. / The viewgraph is here.

# 18

"Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves".
Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama.
The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) July 13-17, 2009, Sendai, Japan.
*** Oral Presentation: Talk-8 (July 15, Wednesday) ****
The abstract is here. / The viewgraph is here.

in 2008

# 17

"Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure".
Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama.
The 35th International Symposium on Compound Semiconductors (ICSC2008) September 21-24, 2008, Europa-Park, Rust, Germany.
*** Poster Presentation P34 (September 23, Tuesday) ***
The abstract is here. / The viewgraph is here.

in 2007

"Photoluminescence-excitation spectroscopy for probing effects of plasma-induced surface damage on carrier transports in AlxGa1-xGaN heterostructures".
Hideo Takeuchi, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, T. Shirahama, H. Tanaka and M. Nakayama.
The 7th International Conference on Nitride Semiconductors, September 16-21, 2007, MGM Hotel, Las Vegas, Nevada, U.S.A.
*** Oral Presentation: GG6 (September 20, Thursday) ***
The abstract is here.

in 2003

"Line-shape analysis of Franz-Keldysh oscillations from a base-emitter junction in an InGaP/GaAs hetero- junction bipolar transistor structure".
Hideo Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.
The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.
*** Poster Presentation: PA56 (Monday) ***
The abstract is here.

"Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering".
W. Susaki, S. Ukawa, S. Yokota, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, and Y. Mihashi.
The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.
*** Poster Presentation: PC46 (Thursday) ***
The abstract is here.

# 13

"Analysis of a phase factor of Franz-Keldysh oscillations in GaAs/AlGaAs heterostructures".
H. Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.
The 5th Topical Workshop of Heterostructure Microelectronics (TWHM 2003), January 21-24, 2003, Nago, Okinawa, Japan.
The abstract is here.

in 2001

"Dynamical properties of coherent plasmon coupled with LO phonon in InAs/GaAs strained superlattices".
K. Mizoguchi, H. Takeuchi, and M. Nakayama.
International Conference on Photoinduced Phase Transitions, their Dynamics and Precursor, November 14-16, 2001, Tsukuba, Ibaragi, Japan.

# 11

"Effects of a miniband structure on coherent LO phonon-plasmon coupled modes in an (InAs)1/(GaAs)30 strained-layer superlattice".
H. Takeuchi, K. Mizoguchi, T. Aida, and M. Nakayama.
The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 12), August 27-31, Sante Fe, New Mexico, U.S.A.
The poster presented at the conference is here.

# 10

"Coherent folded acoustic phonons in GaAs/AlAs superlattices with limited periodicity".
H. Takeuchi, K. Mizoguchi, T. Hino, and M. Nakayama.
The 10th International Conference on Phonon Scattering in Condensed Matter (Phonon 2001), August 12-17, 2001, New Hampshire, U.S.A.
The poster presented at the conference is here.

# 9

"Coherent phonon-plasmon coupled modes in (InAs)1/(GaAs)m strained-layer superlattices".
H. Takeuchi, K. Mizoguchi, and M. Nakayama.
The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications , May 27-31, 2001, Ishikawa, Japan.
The poster presented at the conference is here.

"Mid-infrared electroluminescence from the G2-G1 intersubband transition using G-X electron injection in a GaAs/AlAs double-quantum-well superlattice".
C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama.
The 10th International. Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Ishikawa, Japan, 2001.

in 2000

"Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs double-quantum-well superlattice".
C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, T. Nishimura, H. Takeuchi, and M. Nakayama.
The 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000.

# 6

"Initial phase difference between coherent GaSb-like and AlSb-like LO phonons in GaSb/AlSb superlattices".
H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, and T. Aida.
The 25th International Conference on the Physics of Semiconductors, September 18, 2000, Osaka International Convention Center, Osaka, Japan.
The poster presented at the conference is here.

# 5

"Coherent longitudinal optical phonons in GaSb/AlSb superlattices".
H. Takeuchi, K. Mizoguchi, M. Nakayama, H. Nishimura, K. Kuroyanagi, and T. Aida.
The Third SANKEN International Symposium, "Advanced Nanoelectronics: Devices, Materials, and Computing", March 15, 2000, SANKEN, Osaka University, Osaka, Japan.
The symposium proceeding is here.

in 1999

"Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field".
M. Ando, M. Nakayama, H. Takeuchi, H. Nishimura, N. Ohtani, N. Egami, M. Hosoda, and H. Mimura.
The 1999 Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter, Osaka, Japan, 1999.

in 1998

"Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice".
K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.
The 26th Int. Symp. on Compound Semiconductors, Berlin, Germany, 1999.

"Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAlAs superlattice".
K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.
The 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan, 1999.

in 1997

"Structural changes during photo-induced and thermal crystallization processes in evaporated amorphous GeSe2 films by Raman scattering".
Osamu Matsuda, Hideo Takeuchi, Yong Wang, Kohici Inoue, and KazuoF Murase.
The 7th Int. Conf. on the Structure of Non-Crystalline Materials, Chia Laguna, Sardenga, Italy,1997.